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AP18N20GI MOSFET Transistor

The AP18N20GI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP18N20GI transistor as follows.

Circuit diagram symbol of the AP18N20GI transistor

AP18N20GI Transistor Specification

Transistor Code AP18N20GI
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220F
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 18A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.17Ohm
Power Dissipation (Maximum) PD 34.7W
Drain-Source Capacitance 185pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 21nS

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