AP16N50I MOSFET Transistor

The AP16N50I is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP16N50I transistor as follows.

AP16N50I Transistor Specification

Transistor Code		AP16N50I
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.4Ohm
Power Dissipation (Maximum)	PD	52W
Drain-Source Capacitance		630pF
Rise Time		50nS
Gate-Threshold Voltage (Maximum)		4V

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