AP15P10GJ MOSFET Transistor

The AP15P10GJ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP15P10GJ transistor as follows.

AP15P10GJ Transistor Specification

Transistor Code		AP15P10GJ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.23Ohm
Power Dissipation (Maximum)	PD	96W
Drain-Source Capacitance		250pF
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		3V

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