AP15N03GJ MOSFET Transistor

The AP15N03GJ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP15N03GJ transistor as follows.

AP15N03GJ Transistor Specification

Transistor Code		AP15N03GJ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.08Ohm
Power Dissipation (Maximum)	PD	26W
Drain-Source Capacitance		107pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		22.5nS
Gate-Threshold Voltage (Maximum)		3V

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