AP1332GEU MOSFET Transistor

The AP1332GEU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP1332GEU transistor as follows.

AP1332GEU Transistor Specification

Transistor Code		AP1332GEU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT323
Transistor SMD Code		2SS
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.6Ohm
Power Dissipation (Maximum)	PD	0.35W
Drain-Source Capacitance		17pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		53nS
Gate-Threshold Voltage (Maximum)		1.25V

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