AP10TN5R5LMT MOSFET Transistor

The AP10TN5R5LMT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP10TN5R5LMT transistor as follows.

AP10TN5R5LMT Transistor Specification

Transistor Code		AP10TN5R5LMT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PMPAK5X6
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	22.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0055Ohm
Power Dissipation (Maximum)	PD	5W
Drain-Source Capacitance		685pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		56nS
Gate-Threshold Voltage (Maximum)		3V

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