AP10TN135P MOSFET Transistor

The AP10TN135P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP10TN135P transistor as follows.

AP10TN135P Transistor Specification

Transistor Code		AP10TN135P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Transistor SMD Code		10TN135
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.135Ohm
Power Dissipation (Maximum)	PD	20.8W
Drain-Source Capacitance		27pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		3V

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