AP10TN135JB MOSFET Transistor

The AP10TN135JB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP10TN135JB transistor as follows.

AP10TN135JB Transistor Specification

Transistor Code		AP10TN135JB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251S
Transistor SMD Code		10TN135
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.135Ohm
Power Dissipation (Maximum)	PD	20.8W
Drain-Source Capacitance		27pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		3V

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