AP10TN028YT MOSFET Transistor

The AP10TN028YT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP10TN028YT transistor as follows.

AP10TN028YT Transistor Specification

Transistor Code		AP10TN028YT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PMPAK3X3
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.028Ohm
Power Dissipation (Maximum)	PD	3.125W
Drain-Source Capacitance		185pF
Rise Time		6nS
Gate-Threshold Voltage (Maximum)		3V

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