AP10N9R0I MOSFET Transistor

The AP10N9R0I is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP10N9R0I transistor as follows.

AP10N9R0I Transistor Specification

Transistor Code		AP10N9R0I
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Transistor SMD Code		10N9R0
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	44A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0089Ohm
Power Dissipation (Maximum)	PD	31.2W
Drain-Source Capacitance		870pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		97nS
Gate-Threshold Voltage (Maximum)		5V

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