AP10N70W MOSFET Transistor

The AP10N70W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP10N70W transistor as follows.

AP10N70W Transistor Specification

Transistor Code		AP10N70W
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.6Ohm
Power Dissipation (Maximum)	PD	174W
Drain-Source Capacitance		630pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS
Total Gate Charge		36nC

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