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AP10N70S MOSFET Transistor

The AP10N70S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP10N70S transistor as follows.

Circuit diagram symbol of the AP10N70S transistor

AP10N70S Transistor Specification

Transistor Code AP10N70S
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO263
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.6Ohm
Power Dissipation (Maximum) PD 174W
Drain-Source Capacitance 630pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 19.7nS
Total Gate Charge 35.9nC

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