AP10N6R0S MOSFET Transistor

The AP10N6R0S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP10N6R0S transistor as follows.

AP10N6R0S Transistor Specification

Transistor Code		AP10N6R0S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Transistor SMD Code		10N6R0
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	95A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	104W
Drain-Source Capacitance		630pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		68nS
Gate-Threshold Voltage (Maximum)		4V

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