AP10N4R5S MOSFET Transistor

The AP10N4R5S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP10N4R5S transistor as follows.

AP10N4R5S Transistor Specification

Transistor Code		AP10N4R5S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Transistor SMD Code		10N4R5
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0045Ohm
Power Dissipation (Maximum)	PD	138.8W
Drain-Source Capacitance		1175pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		100nS
Gate-Threshold Voltage (Maximum)		5V

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