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AP10N4R5I MOSFET Transistor

The AP10N4R5I is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP10N4R5I transistor as follows.

Circuit diagram symbol of the AP10N4R5I transistor

AP10N4R5I Transistor Specification

Transistor Code AP10N4R5I
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220F
Transistor SMD Code 10N4R5
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 70A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0045Ohm
Power Dissipation (Maximum) PD 39W
Drain-Source Capacitance 1600pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 94nS
Gate-Threshold Voltage (Maximum) 5V

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