AP10N4R5I MOSFET Transistor

The AP10N4R5I is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP10N4R5I transistor as follows.

AP10N4R5I Transistor Specification

Transistor Code		AP10N4R5I
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Transistor SMD Code		10N4R5
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	70A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0045Ohm
Power Dissipation (Maximum)	PD	39W
Drain-Source Capacitance		1600pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		94nS
Gate-Threshold Voltage (Maximum)		5V

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