AP10N012MT MOSFET Transistor

The AP10N012MT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP10N012MT transistor as follows.

AP10N012MT Transistor Specification

Transistor Code		AP10N012MT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PMPAK5X6
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	14.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0125Ohm
Power Dissipation (Maximum)	PD	5W
Drain-Source Capacitance		710pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		62nS
Gate-Threshold Voltage (Maximum)		5V

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