AP10A185M MOSFET Transistor

The AP10A185M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP10A185M transistor as follows.

AP10A185M Transistor Specification

Transistor Code		AP10A185M
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.185Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		40pF
Rise Time		4nS
Gate-Threshold Voltage (Maximum)		3V

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