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AP1004CMX MOSFET Transistor

The AP1004CMX is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP1004CMX transistor as follows.

Circuit diagram symbol of the AP1004CMX transistor

AP1004CMX Transistor Specification

Transistor Code AP1004CMX
Transistor Type MOSFET
Control Channel Type N-Channel
Package CHIP
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 32A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0018Ohm
Power Dissipation (Maximum) PD 2.8W
Drain-Source Capacitance 1600pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 130nS
Gate-Threshold Voltage (Maximum) 3V

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