AP09N90W MOSFET Transistor

The AP09N90W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP09N90W transistor as follows.

AP09N90W Transistor Specification

Transistor Code		AP09N90W
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	900V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	8.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	240W
Drain-Source Capacitance		221pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10.3nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		67.1nC

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