AP09N90CW MOSFET Transistor

The AP09N90CW is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP09N90CW transistor as follows.

AP09N90CW Transistor Specification

Transistor Code		AP09N90CW
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	900V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	208W
Drain-Source Capacitance		516pF
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		4V

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