AP09N20H MOSFET Transistor

The AP09N20H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP09N20H transistor as follows.

AP09N20H Transistor Specification

Transistor Code		AP09N20H
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	8.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.38Ohm
Power Dissipation (Maximum)	PD	69W
Drain-Source Capacitance		90pF
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		4V

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