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AP0904GMT MOSFET Transistor

The AP0904GMT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP0904GMT transistor as follows.

Circuit diagram symbol of the AP0904GMT transistor

AP0904GMT Transistor Specification

Transistor Code AP0904GMT
Transistor Type MOSFET
Control Channel Type N-Channel
Package PMPAK5X6
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 17.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0095Ohm
Power Dissipation (Maximum) PD 5W
Drain-Source Capacitance 160pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 6.5nS
Gate-Threshold Voltage (Maximum) 3V

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