AP0904GJB MOSFET Transistor

The AP0904GJB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP0904GJB transistor as follows.

AP0904GJB Transistor Specification

Transistor Code		AP0904GJB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251S
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	51A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.01Ohm
Power Dissipation (Maximum)	PD	44.6W
Drain-Source Capacitance		160pF
Rise Time		6.5nS
Gate-Threshold Voltage (Maximum)		3V

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