AP0903GYT MOSFET Transistor

The AP0903GYT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP0903GYT transistor as follows.

AP0903GYT Transistor Specification

Transistor Code		AP0903GYT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PMPAK3X3
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	3.5W
Drain-Source Capacitance		215pF
Rise Time		7nS
Gate-Threshold Voltage (Maximum)		3V

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