AP0903GM MOSFET Transistor

The AP0903GM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP0903GM transistor as follows.

AP0903GM Transistor Specification

Transistor Code		AP0903GM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	13.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0085Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		190pF
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		3V

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