AP08P20GP MOSFET Transistor

The AP08P20GP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP08P20GP transistor as follows.

AP08P20GP Transistor Specification

Transistor Code		AP08P20GP
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.68Ohm
Power Dissipation (Maximum)	PD	96W
Drain-Source Capacitance		170pF
Rise Time		14nS
Gate-Threshold Voltage (Maximum)		4V

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