AP0603GM MOSFET Transistor

The AP0603GM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP0603GM transistor as follows.

AP0603GM Transistor Specification

Transistor Code		AP0603GM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		330pF
Rise Time		4.5nS
Gate-Threshold Voltage (Maximum)		3V

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