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AP05N50EJ MOSFET Transistor

The AP05N50EJ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP05N50EJ transistor as follows.

Circuit diagram symbol of the AP05N50EJ transistor

AP05N50EJ Transistor Specification

Transistor Code AP05N50EJ
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO251
Transistor SMD Code 05N50EJ
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 5A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.6Ohm
Power Dissipation (Maximum) PD 73.5W
Drain-Source Capacitance 75pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 4nS
Gate-Threshold Voltage (Maximum) 4V

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