AP05FN50I MOSFET Transistor

The AP05FN50I is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP05FN50I transistor as follows.

AP05FN50I Transistor Specification

Transistor Code		AP05FN50I
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.6Ohm
Power Dissipation (Maximum)	PD	31.3W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		4V

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