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AP04N70BI MOSFET Transistor

The AP04N70BI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP04N70BI transistor as follows.

Circuit diagram symbol of the AP04N70BI transistor

AP04N70BI Transistor Specification

Transistor Code AP04N70BI
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220F
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.4Ohm
Power Dissipation (Maximum) PD 33W
Drain-Source Capacitance 65pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 8.3nS
Gate-Threshold Voltage (Maximum) 4V

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