AP04N70BI MOSFET Transistor

The AP04N70BI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP04N70BI transistor as follows.

AP04N70BI Transistor Specification

Transistor Code		AP04N70BI
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.4Ohm
Power Dissipation (Maximum)	PD	33W
Drain-Source Capacitance		65pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8.3nS
Gate-Threshold Voltage (Maximum)		4V

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