AP04N60J MOSFET Transistor

The AP04N60J is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP04N60J transistor as follows.

AP04N60J Transistor Specification

Transistor Code		AP04N60J
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	620V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.5Ohm
Power Dissipation (Maximum)	PD	59.5W
Drain-Source Capacitance		70pF
Rise Time		20nS
Gate-Threshold Voltage (Maximum)		4V

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