AP02N90JB MOSFET Transistor

The AP02N90JB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP02N90JB transistor as follows.

AP02N90JB Transistor Specification

Transistor Code		AP02N90JB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251S
Transistor SMD Code		02N90J
Drain-Source Voltage (Maximum)	VDS	900V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	7.2Ohm
Power Dissipation (Maximum)	PD	62.5W
Drain-Source Capacitance		40pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		4V

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