AP02N90H MOSFET Transistor

The AP02N90H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP02N90H transistor as follows.

AP02N90H Transistor Specification

Transistor Code		AP02N90H
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Transistor SMD Code		02N90H
Drain-Source Voltage (Maximum)	VDS	900V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	7.2Ohm
Power Dissipation (Maximum)	PD	62.5W
Drain-Source Capacitance		40pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		4V

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