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AP02N70EJ MOSFET Transistor

The AP02N70EJ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP02N70EJ transistor as follows.

Circuit diagram symbol of the AP02N70EJ transistor

AP02N70EJ Transistor Specification

Transistor Code AP02N70EJ
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO251
Drain-Source Voltage (Maximum) VDS 700V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 1.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 7Ohm
Power Dissipation (Maximum) PD 45W
Drain-Source Capacitance 30pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 8nS
Gate-Threshold Voltage (Maximum) 4V

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