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AP02N60H-H MOSFET Transistor

The AP02N60H-H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP02N60H-H transistor as follows.

Circuit diagram symbol of the AP02N60H-H transistor

AP02N60H-H Transistor Specification

Transistor Code AP02N60H-H
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 700V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 8.8Ohm
Power Dissipation (Maximum) PD 39W
Drain-Source Capacitance 27pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 12nS

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