AP0203GMT MOSFET Transistor

The AP0203GMT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP0203GMT transistor as follows.

AP0203GMT Transistor Specification

Transistor Code		AP0203GMT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PMPAK5X6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	38A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0022Ohm
Power Dissipation (Maximum)	PD	5W
Drain-Source Capacitance		820pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11.5nS
Gate-Threshold Voltage (Maximum)		3V

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