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AP01N40J MOSFET Transistor

The AP01N40J is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP01N40J transistor as follows.

Circuit diagram symbol of the AP01N40J transistor

AP01N40J Transistor Specification

Transistor Code AP01N40J
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO251
Drain-Source Voltage (Maximum) VDS 400V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 0.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 16Ohm
Power Dissipation (Maximum) PD 17.4W
Drain-Source Capacitance 11pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 12nS
Gate-Threshold Voltage (Maximum) 3V

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