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AP01L60J MOSFET Transistor

The AP01L60J is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP01L60J transistor as follows.

Circuit diagram symbol of the AP01L60J transistor

AP01L60J Transistor Specification

Transistor Code AP01L60J
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO251
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1A
Drain-Source On-State Resistance (Maximum) RDS(on) 12Ohm
Power Dissipation (Maximum) PD 29W
Drain-Source Capacitance 30.7pF
Rise Time 5nS
Gate-Threshold Voltage (Maximum) 4V

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