AP01L60H MOSFET Transistor

The AP01L60H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP01L60H transistor as follows.

AP01L60H Transistor Specification

Transistor Code		AP01L60H
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	12Ohm
Power Dissipation (Maximum)	PD	29W
Drain-Source Capacitance		30.7pF
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		4V

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