AP01L60AT MOSFET Transistor

The AP01L60AT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP01L60AT transistor as follows.

AP01L60AT Transistor Specification

Transistor Code		AP01L60AT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO92
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	12Ohm
Power Dissipation (Maximum)	PD	0.83W
Drain-Source Capacitance		30.7pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS

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