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AOY2610E MOSFET Transistor

The AOY2610E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOY2610E transistor as follows.

Circuit diagram symbol of the AOY2610E transistor

AOY2610E Transistor Specification

Transistor Code AOY2610E
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO251B
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 46A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0095Ohm
Power Dissipation (Maximum) PD 59.5W
Drain-Source Capacitance 300pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 19nS
Gate-Threshold Voltage (Maximum) 2.4V

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