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AOWF190A60 MOSFET Transistor

The AOWF190A60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOWF190A60 transistor as follows.

Circuit diagram symbol of the AOWF190A60 transistor

AOWF190A60 Transistor Specification

Transistor Code AOWF190A60
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO262F
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.19Ohm
Power Dissipation (Maximum) PD 27W
Drain-Source Capacitance 55pF
Rise Time 341nS
Gate-Threshold Voltage (Maximum) 4V

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