AOW12N60 MOSFET Transistor

The AOW12N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOW12N60 transistor as follows.

AOW12N60 Transistor Specification

Transistor Code		AOW12N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.55Ohm
Power Dissipation (Maximum)	PD	278W
Drain-Source Capacitance		164pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		70nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		40nC

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