AOTF4N60 MOSFET Transistor

The AOTF4N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOTF4N60 transistor as follows.

AOTF4N60 Transistor Specification

Transistor Code		AOTF4N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.2Ohm
Power Dissipation (Maximum)	PD	35W
Drain-Source Capacitance		51pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		28.7nS
Gate-Threshold Voltage (Maximum)		4.5V

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