AOTF262L MOSFET Transistor

The AOTF262L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOTF262L transistor as follows.

AOTF262L Transistor Specification

Transistor Code		AOTF262L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	85A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0036Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		1040pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		22nS
Gate-Threshold Voltage (Maximum)		3.2V

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