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AOTF20S60L MOSFET Transistor

The AOTF20S60L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOTF20S60L transistor as follows.

Circuit diagram symbol of the AOTF20S60L transistor

AOTF20S60L Transistor Specification

Transistor Code AOTF20S60L
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220F
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.199Ohm
Power Dissipation (Maximum) PD 37.8W
Drain-Source Capacitance 68pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 32nS
Gate-Threshold Voltage (Maximum) 4.1V

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