AOTF190A60L MOSFET Transistor

The AOTF190A60L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOTF190A60L transistor as follows.

AOTF190A60L Transistor Specification

Transistor Code		AOTF190A60L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.19Ohm
Power Dissipation (Maximum)	PD	32W
Drain-Source Capacitance		55pF
Rise Time		341nS
Gate-Threshold Voltage (Maximum)		4.6V

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