AOTF18N65 MOSFET Transistor

The AOTF18N65 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOTF18N65 transistor as follows.

AOTF18N65 Transistor Specification

Transistor Code		AOTF18N65
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.39Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		271pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		83nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		56nC

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