AOTF11N62 MOSFET Transistor

The AOTF11N62 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOTF11N62 transistor as follows.

AOTF11N62 Transistor Specification

Transistor Code		AOTF11N62
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	620V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.65Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		146pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		58nS
Gate-Threshold Voltage (Maximum)		4.5V

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