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AOTF11N60 MOSFET Transistor

The AOTF11N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOTF11N60 transistor as follows.

Circuit diagram symbol of the AOTF11N60 transistor

AOTF11N60 Transistor Specification

Transistor Code AOTF11N60
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 11A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.65Ohm
Power Dissipation (Maximum) PD 50W
Drain-Source Capacitance 146pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 58nS
Gate-Threshold Voltage (Maximum) 4.5V

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